K75EEH5 N-channel IGBT — 650V, 90A, 395W, TO-247, with anti-parallel diode Xl1509 5.0 5V UV lockout

UV lockout

Optional European standard output terminal

11 b/g/n (XR819 chip

Operating voltage: 5V via micro-USB

Despite its smaller size

K75EEH5 N-channel IGBT — 650V, 90A, 395W, TO-247, with anti-parallel diode Xl1509 5.0 5V UV lockoutThe K75EEH5 is a high voltage N channel IGBT (Insulated Gate Bipolar Transistor) with an integrated anti parallel freewheeling diode, housed in the robust TO 247 through hole package. Rated at 650V collector emitter voltage and 90A continuous collector current at 25C, it is designed for demanding power switching applications including solar inverters, UPS systems, industrial motor drives, and induction heating equipment. With a low saturation voltage